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Si4477DY
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
V DS (V) R DS(on) ( Ω )
I D (A) d
Q g (Typ.)
FEATURES
? Halogen-free According to IEC 61249-2-21
Definition
- 20
0.0062 at V GS = - 4.5 V
0.0105 at V GS = - 2.5 V
- 26.6
- 20.6
59 nC
? TrenchFET ? Power MOSFET
? 100 % R g Tested
? 100 % UIS Tested
? Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
? Load Switch
? Adapter Switch
SO-8
- Notebook
- Game Station
S
S
1
8
D
S
S
G
2
3
4
7
6
5
D
D
D
G
Top View
Ordering Information: Si4477DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
D
P-Channel MOSFET
Parameter
Drain-Source Voltage
Gate-Source Voltage
T C = 25 °C
Symbol
V DS
V GS
Limit
- 20
± 12
- 26.6
Unit
V
Continuous Drain Current (T J = 150 °C)
T C = 70 °C
T A = 25 °C
I D
- 21.3
- 18 a, b
Pulsed Drain Current
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
T A = 70 °C
T C = 25 °C
T A = 25 °C
L = 0.1 mH
I DM
I S
I AS
E AS
- 14.5 a, b
- 60
- 5.5
- 2.5 a, b
30
45
A
mJ
T C = 25 °C
6.6
Maximum Power Dissipation
T C = 70 °C
T A = 25 °C
P D
4.2
3 a, b
W
T A = 70 °C
1.95 a, b
Operating Junction and Storage Temperature Range
T J , T stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient a, c
Maximum Junction-to-Foot
t ≤ 10 s
Steady State
R thJA
R thJF
34
15
41
19
°C/W
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under Steady State conditions is 80 °C/W.
d. Based on T C = 25 °C.
Document Number: 64829
S09-0858-Rev. A, 18-May-09
www.vishay.com
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